NPT IGBT
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency...
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.
FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability
GJ HC
KGT50N60KDA
AB O SK
D E F
PP 123
DIM MILLIMETERS A 15.90 +_ 0.30
B 5.00 +_ 0.20 C 20.85 +_ 0.30 D 3.00 +_ 0.20 E 2.00 +_ 0.20 F 1.20 +_ 0.20
MG H I
Max. 4.50 20.10 +_ 0.70
0.60 +_ 0.02
I J 14.70 +_ 0.20 K 2.00 +_ 0.10 M 2.40 +_ 0.20
O 3.60 +_ 0.30 P 5.45 +_ 0.30 Q 3.60 +_ 0.20 R 7.19 +_ 0.10
S
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage Gate-Emitter Voltage
VCES VGES
600 V 20 V
Collector Current
@Tc=25 @Tc=100
100 A IC
50 A
Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current
ICM* 150 A IF 50 A IFM 100 A
Maximum Power Dissipation
@Tc=25 @Tc=100
345 W PD
138 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient
SYMBOL Rt h JC Rt h JC Rt h JA
MAX. 0.36 1.0 40
UNIT /W /W /W
TO-247
C G
E
E C G
2011. 5. 25
Revision N...
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