KGT50N60KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability GJ HC KGT50N60KDA AB O SK D E F PP 123 DIM MILLIMETERS A 15.90 +_ 0.30 B 5.00 +_ 0.20 C 20.85 +_ 0.30 D 3.00 +_ 0.20 E 2.00 +_ 0.20 F 1.20 +_ 0.20 MG H I Max. 4.50 20.10 +_ 0.70 0.60 +_ 0.02 I J 14.70 +_ 0.20 K 2.00 +_ 0.10 M 2.40 +_ 0.20 O 3.60 +_ 0.30 P 5.45 +_ 0.30 Q 3.60 +_ 0.20 R 7.19 +_ 0.10 S MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 600 V 20 V Collector Current @Tc=25 @Tc=100 100 A IC 50 A Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current ICM* 150 A IF 50 A IFM 100 A Maximum Power Dissipation @Tc=25 @Tc=100 345 W PD 138 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.36 1.0 40 UNIT /W /W /W TO-247 C G E E C G 2011. 5. 25 Revision N...