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MTA800 Dataheets PDF



Part Number MTA800
Manufacturers TECHSEM
Logo TECHSEM
Description Thyristor Modules
Datasheet MTA800 DatasheetMTA800 Datasheet (PDF)

MTC800 MTA800 MTK800 MTX800 MT800 Thyristor Modules Features:  Isolated mounting base 2500V~  Pressure contact technology with Incrtased power cycling capability  Space and weight savings Typical Applications:  AC/DC Motor drives  Various rectifiers  DC supply for PWM inverter IT(AV) VDRM/VRRM ITSM I2t 800A 600~1800V 22 KA 2420 103A2S SYMBOL CHARACTERISTIC TEST CONDITIONS IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM I2t VTO rT VTM dv/dt di/dt IGT VGT IH VGD Rth(j-c) Rth(c-h) Viso Fm Tstg.

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MTC800 MTA800 MTK800 MTX800 MT800 Thyristor Modules Features:  Isolated mounting base 2500V~  Pressure contact technology with Incrtased power cycling capability  Space and weight savings Typical Applications:  AC/DC Motor drives  Various rectifiers  DC supply for PWM inverter IT(AV) VDRM/VRRM ITSM I2t 800A 600~1800V 22 KA 2420 103A2S SYMBOL CHARACTERISTIC TEST CONDITIONS IT(AV) IT(RMS) VDRM VRRM IDRM IRRM ITSM I2t VTO rT VTM dv/dt di/dt IGT VGT IH VGD Rth(j-c) Rth(c-h) Viso Fm Tstg Wt Outline Mean on-state current RMS on-state current 180 half sine wave 50Hz Single side cooled,Tc=85C Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V Repetitive peak current Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage VDM= VDRM VRM= VRRM 10ms half sine wave VR=0.6VRRM ITM=2400A Critical rate of rise of off-state voltage VDM=67%VDRM Critical rate of rise of on-state current Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Thermal connection torque(M12) Mounting torque(M8) Stored temperature Weight ITM =1600A, Gate source 1.5A tr ≤0.5μs Repetitive VA=12V, IA=1A VDM=67%VDRM Single side cooled Single side cooled 50Hz,R.M.S,t=1min,Iiso:1mA(MAX) 410F3/432F2 Tj(C) Min VALUE Type Max UNIT 125 800 A 125 1256 A 125 600 1800 V 125 45 mA 22.0 KA 125 2420 A2s*103 0.80 V 125 0.20 mΩ 25 1.86 V 125 800 V/μs 125 100 A/μs 30 25 1.0 20 125 0.2 2500 -40 12 8 3500 200 3.0 200 0.042 0.020 125 mA V mA V C /W C /W V N·m N·m C g http://www.tech-sem.com Page 1 of 3 2013-07 MTC800 MTA800 MTK800 MTX800 MT800 http://www.tech-sem.com Page 2 of 4 2013-07 Iinstantaneous on-state voltage,volts MTC800 MTA800 MTK800 MTX800 MT800 Peak On-state VMoTltCag8e00Vs.Peak On-state Current 5 4 TJ=125°C 3 2 1 0 100 1000 10000 100000 Instantaneous on-state currant,amperes Fig.1 Transient thermal impedance,°C/W Max. junction To case0T.h0e4rm2ai Impedance Vs.Time 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0.001 0.01 0.1 1 Tim e,s econd s Fig.2 10 Max on-state dissipation,watts 1200 1000 800 Max. Power DissMipTaCt8io0n0Vs.Mean On-state Current 0 180 Conduction Angle 60 180 120 90 30 600 400 200 0 0 100 200 300 400 500 600 700 800 900 Mean on-state current,amperes Fig.3 Case temperature°C Max. case TemperatMurTeCV8s0.0Mean On-state Current 140 120 0 180 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 200 400 600 800 1000 1200 1400 1600 Mean on-state current,amperes Fig.4 Max on-state dissipation,watts 1000 800 600 400 Max. Power DiMssTipCa8t0io0nVs.Mean On-state Current 360 Conduction Angle 60 180 120 90 30 DC 270 200 0 0 100 200 300 400 500 600 700 800 900 Mean on-state current,amperes Case temperature,°C Max. case TemperaMtuTreC8V0s0.Mean On-state Current 140 120 360 100 Conduction Angle 80 60 40 20 0 0 30 60 90 120 180 270 DC 400 800 1200 1600 2000 2400 Mean on-state current,amperes Fig.5 http://www.tech-sem.com Page 3 of 4 Fig.6 2013-07 MTC800 MTA800 MTK800 MTX800 MT800 Surge Cur2r2ent Vs.Cycles 24 Total peak half-sine surge current,kA 20 16 12 8 4 1 10 Cycles at 50Hz Fig.7 100 Gate voltage,VGT,V Gate characteristic at 25°C junction temperature 18 16 14 PGM=120W 12 max (100μs pulse) 10 8 6 min. 4 PG2W 2 0 0 4 8 12 16 20 Gate current,IGT,A Fig.9 Outline: Gate voltage,VGT,V Maximum 2It(Kamps2,secs) 2500 2300 2100 1900 1700 1500 1300 1100 900 700 500 1 I2t22V/s2.4T2im0 e Time,m.seconds Fig.8 10 Gate Trigger Zo3nVe,2a0t 0vMaAries temperature 4.5 -30°C 4 -10°C 3.5 25°C 3 125°C 2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300 Gate current,IGT,mA Fig.10 350 http://www.tech-sem.com 410F3 3 Page 4 of 4 1 2 2013-07 .


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