Document
MTC800 MTA800 MTK800 MTX800 MT800
Thyristor Modules
Features:
Isolated mounting base 2500V~ Pressure contact technology with
Incrtased power cycling capability Space and weight savings
Typical Applications:
AC/DC Motor drives Various rectifiers DC supply for PWM inverter
IT(AV)
VDRM/VRRM
ITSM I2t
800A 600~1800V 22 KA 2420 103A2S
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
IT(AV)
IT(RMS)
VDRM VRRM IDRM IRRM ITSM
I2t VTO rT VTM
dv/dt
di/dt
IGT VGT IH VGD Rth(j-c) Rth(c-h) Viso
Fm
Tstg Wt Outline
Mean on-state current RMS on-state current
180 half sine wave 50Hz Single side cooled,Tc=85C
Repetitive peak off-state voltage Repetitive peak reverse voltage
VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V
Repetitive peak current
Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage
VDM= VDRM VRM= VRRM 10ms half sine wave VR=0.6VRRM
ITM=2400A
Critical rate of rise of off-state voltage VDM=67%VDRM
Critical rate of rise of on-state current
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Thermal connection torque(M12) Mounting torque(M8) Stored temperature Weight
ITM =1600A, Gate source 1.5A tr ≤0.5μs Repetitive
VA=12V, IA=1A
VDM=67%VDRM Single side cooled Single side cooled 50Hz,R.M.S,t=1min,Iiso:1mA(MAX)
410F3/432F2
Tj(C) Min
VALUE Type Max
UNIT
125 800 A
125
1256
A
125 600
1800
V
125 45 mA
22.0 KA 125
2420 A2s*103 0.80 V 125 0.20 mΩ 25 1.86 V
125 800 V/μs
125 100 A/μs
30 25 1.0
20 125 0.2
2500
-40
12 8
3500
200 3.0 200
0.042 0.020
125
mA V mA V C /W
C /W V
N·m N·m
C g
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MTC800 MTA800 MTK800 MTX800 MT800
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Iinstantaneous on-state voltage,volts
MTC800 MTA800 MTK800 MTX800 MT800
Peak On-state VMoTltCag8e00Vs.Peak On-state Current 5
4 TJ=125°C
3
2
1
0 100
1000
10000
100000
Instantaneous on-state currant,amperes
Fig.1
Transient thermal impedance,°C/W
Max. junction To case0T.h0e4rm2ai Impedance Vs.Time 0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000 0.001
0.01
0.1 1 Tim e,s econd s
Fig.2
10
Max on-state dissipation,watts
1200 1000
800
Max. Power DissMipTaCt8io0n0Vs.Mean On-state Current
0 180 Conduction Angle
60
180 120
90
30 600
400
200
0 0 100 200 300 400 500 600 700 800 900 Mean on-state current,amperes
Fig.3
Case temperature°C
Max. case TemperatMurTeCV8s0.0Mean On-state Current 140
120 0 180
100 Conduction Angle
80
60
40
20
0 0
30 60 90 120 180
200 400 600 800 1000 1200 1400 1600 Mean on-state current,amperes
Fig.4
Max on-state dissipation,watts
1000 800 600 400
Max. Power DiMssTipCa8t0io0nVs.Mean On-state Current
360
Conduction Angle 60
180
120 90
30
DC 270
200
0 0 100 200 300 400 500 600 700 800 900 Mean on-state current,amperes
Case temperature,°C
Max. case TemperaMtuTreC8V0s0.Mean On-state Current 140
120 360
100 Conduction Angle
80
60
40
20
0 0
30 60 90 120 180 270 DC
400 800 1200 1600 2000 2400 Mean on-state current,amperes
Fig.5 http://www.tech-sem.com
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Fig.6
2013-07
MTC800 MTA800 MTK800 MTX800 MT800
Surge Cur2r2ent Vs.Cycles 24
Total peak half-sine surge current,kA
20
16
12
8
4 1 10 Cycles at 50Hz
Fig.7
100
Gate voltage,VGT,V
Gate characteristic at 25°C junction temperature 18
16
14 PGM=120W 12 max (100μs pulse)
10
8 6 min.
4 PG2W
2
0 0 4 8 12 16 20 Gate current,IGT,A
Fig.9
Outline:
Gate voltage,VGT,V
Maximum 2It(Kamps2,secs)
2500 2300 2100 1900 1700 1500 1300 1100
900 700 500
1
I2t22V/s2.4T2im0 e
Time,m.seconds
Fig.8
10
Gate Trigger Zo3nVe,2a0t 0vMaAries temperature 4.5
-30°C
4 -10°C 3.5 25°C
3
125°C
2.5
2
1.5
1
0.5
0 0 50 100 150 200 250 300 Gate current,IGT,mA
Fig.10
350
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410F3
3
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