C-Band Power Amplifier MMIC
FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz
•Impedanc...
Description
FEATURES Output Power; P1dB = 26 dBm (Typ.) High Gain; GL = 30 dB(Typ.) Wide Frequency Band ; 3.4 – 8.5 GHz
Impedance Matched Zin/Zout = 50Ω QFN 24pin Plastic Mold Package(ZV)
EMM5078ZV
C-Band Power Amplifier MMIC
DESCRIPTION The EMM5078ZV is a wide band power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 3.4 to 8.5GHz frequency range. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature
Symbol
VDD VGG Pin Tstg
Rating 10 -3 22
-55 to +125
Unit V
V
dBm oC
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power Operating Backside Temperature
Pin Top
Condition <=6 <=2
-40 to +85
Unit V
dBm
℃
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation*
Drain Current at 1dB G.C.P. Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm)
f VDD=6V
3.4 - 8.5
P1dB IDD(DC)=300mA typ. 23
26
-
G1dB Zs=Zl=50ohm
24 29
-
ηadd
- 18
-
IM3 *:∆f=10MHz ,
-35 -40 -
IDD 2-Tone Test,
- 350 450
RLin Pout=15dBm S.C.L. - -10 -
RLout
- -10 -
GHz dBm dB
% dBc
mA dB dB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
E...
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