Document
PD - 97218
IRF6626PbF
IRF6626TRPbF
l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
ST DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6626PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current hSingle Pulse Avalanche Energy ÃgAvalanche Current
Max. 30 ±20 16 13 72 130 24 13
Units V
A
mJ A
Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V)
15 ID = 16A
10 TJ = 125°C
5 TJ = 25°C
0 345678
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0 5.0 ID= 13A VDS= 24V 4.0 VDS= 15V
3.0
2.0
1.0
0.0 0
10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 13A.
1
05/29/06
IRF6626PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS ∆ΒVDSS/∆TJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
30 ––– ––– –––
VGS(th) ∆VGS(th)/∆TJ IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
1.35 ––– ––– –––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
64
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current (Body Diode) e
–––
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
––– ––– –––
Typ. ––– 23 4.0 5.2 ––– -6.0 ––– ––– ––– ––– ––– 19 5.2 1.6 6.7 5.5 8.3 13
––– 13 15 17 4.5 2380 530 260
Typ. –––
–––
––– 15 5.4
Max. Units
Conditions
––– ––– 5.4 7.1 2.35
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 16A i VGS = 4.5V, ID = 13A i
V VDS = VGS, ID = 250µA
––– mV/°C
1.0 150 100 -100 –––
µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V VGS = -20V
S VDS = 15V, ID = 13A
29
––– VDS = 15V ––– nC VGS = 4.5V
ID = 13A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
1.5 Ω ––– VDD = 16V, VGS = 4.5V i ––– ID = 13A
––– ns Clamped Inductive Load
––– See Fig. 16 & 17
––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz
Max. Units
Conditions
52 MOSFET symbol
A showing the
130 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 13A, VGS = 0V i 23 ns TJ = 25°C, IF = 13A
8.1 nC di/dt = 100A/µs i.