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IRF6626TRPbF Dataheets PDF



Part Number IRF6626TRPbF
Manufacturers International Rectifier
Logo International Rectifier
Description DirectFET Power MOSFET
Datasheet IRF6626TRPbF DatasheetIRF6626TRPbF Datasheet (PDF)

PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs.

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PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V ST DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6626PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current hSingle Pulse Avalanche Energy ÃgAvalanche Current Max. 30 ±20 16 13 72 130 24 13 Units V A mJ A Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) 15 ID = 16A 10 TJ = 125°C 5 TJ = 25°C 0 345678 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com 6.0 5.0 ID= 13A VDS= 24V 4.0 VDS= 15V 3.0 2.0 1.0 0.0 0 10 20 30 QG Total Gate Charge (nC) Fig 2. Typical On-Resistance vs. Gate Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 13A. 1 05/29/06 IRF6626PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 30 ––– ––– ––– VGS(th) ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 1.35 ––– ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– gfs Forward Transconductance 64 Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Parameter Min. IS Continuous Source Current ––– (Body Diode) ISM Pulsed Source Current (Body Diode) e ––– VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– Typ. ––– 23 4.0 5.2 ––– -6.0 ––– ––– ––– ––– ––– 19 5.2 1.6 6.7 5.5 8.3 13 ––– 13 15 17 4.5 2380 530 260 Typ. ––– ––– ––– 15 5.4 Max. Units Conditions ––– ––– 5.4 7.1 2.35 V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 16A i VGS = 4.5V, ID = 13A i V VDS = VGS, ID = 250µA ––– mV/°C 1.0 150 100 -100 ––– µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 13A 29 ––– VDS = 15V ––– nC VGS = 4.5V ID = 13A ––– See Fig. 15 ––– ––– nC VDS = 16V, VGS = 0V 1.5 Ω ––– VDD = 16V, VGS = 4.5V i ––– ID = 13A ––– ns Clamped Inductive Load ––– See Fig. 16 & 17 ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz Max. Units Conditions 52 MOSFET symbol A showing the 130 integral reverse p-n junction diode. 1.0 V TJ = 25°C, IS = 13A, VGS = 0V i 23 ns TJ = 25°C, IF = 13A 8.1 nC di/dt = 100A/µs i.


IRF6626PbF IRF6626TRPbF 9220-00


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