CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC3415A3
Spec. No. : C209A3 Issued Date : 2008....
CYStech Electronics Corp.
High Voltage
NPN Epitaxial Planar
Transistor
BTC3415A3
Spec. No. : C209A3 Issued Date : 2008.01.25 Revised Date : 2014.03.06 Page No. : 1/6
Description
High breakdown voltage. (BVCEO=300V) Low collector output capacitance. (Typ. 2.1pF at VCB =30V) Ideal for chroma circuit. Pb-free lead plating and halogen-free package.
Symbol
BTC3415A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Ordering Information
Device BTC3415A3-0-TB-G BTC3415A3-0-BK-G
Package
TO-92 (Pb-free lead plating and halogen-free package)
TO-92 (Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box, 10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products Product name
BTC3415A3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd Tj Tstg
Limits
400 300
6 100 625 150 -55~+150
Spec. No. : C209A3 Issued Date : 2008.01.25 Revised Date : 2014.03.06 Page No. : 2/6
Unit V V V mA mW °C °C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob...
