G23N60UFD

SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A High Input Impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO--33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30 -55 to +150 -55 to +150 300 Typ. ---- Max. 1.6 3.0 40...