N-Channel Enhancement Mode Field Effect Transistor
Description
CEP630N/CEB630N CEF630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PA...
