CEP630N/CEB630N CEF630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP630N CEB630N CEF630N
VDSS...
CEP630N/CEB630N CEF630N
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
200 ±20 9 36 78 0.63
9d 36 d 33 0.27
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.6 62.5
3.7 65
Units
V V A A W W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct. http://www.cet-mos.com
CEP630N/CEB630N CEF630N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Volt...