HEXFET Power MOSFET
AUTOMOTIVE GRADE
PD - 96405A
AUIRFS4410Z
Features
AUIRFSL4410Z
l Advanced Process Technology l Ultra Low On-Resistan...
Description
AUTOMOTIVE GRADE
PD - 96405A
AUIRFS4410Z
Features
AUIRFSL4410Z
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
Description
HEXFET® Power MOSFET
D VDSS RDS(on) typ.
100V 7.2mΩ
G max. 9.0mΩ
S ID
97A
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D
DS G
D2Pak AUIRFS4410Z
DS G
TO-262 AUIRFSL4410Z
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
I...
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