NP70N10KUF

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP70N10KUF-E1-AZ Note Pure Sn (Tin) NP70N10KUF-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) typ. 1.5 g (TO-263) FEATURES Channel temperature 175 degree rating Super low on-state resistance RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) Low Ciss: Ciss = 2500 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±70 ±135 A A Total Power Dissipation (TA = 25°C) PT1 1.8 W Total Power Dissipation (TC = 25°C) PT2 120 W Channel Temperature Tch 175 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% Tstg −55 to +175 °C IAS 22 A EAS 48 mJ 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in ever...