FH105A

Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package Optimal for differential amplification due to excellent thermal equilibrium and pair capability Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) 1unit When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 10 1.5 30 150 300 150 --55 to +150 Unit V V V mA mW mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7026A-005 2.0 654 0.15 FH105A-TR-E 0 to 0.08 0.9 2.1 0.2 0.425 1.25 0.425 0.2 12 0.65 3 0.3 1 : Collector1 2 : Base2 3 : Collector2 4 : Emitter2 5 : Emitter1 6 : Base1 MCP6 Product & Package Information Package : MCP6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 ...