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NRVTS1260EMFS

ON Semiconductor

Exceptionally Low Leakage Trench-based Schottky Rectifier

NRVTS1260EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schott...


ON Semiconductor

NRVTS1260EMFS

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Description
NRVTS1260EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features Fine Lithography Trench−based Schottky Technology for Very Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices Typical Applications Switching Power Supplies including Wireless, Smartphone and Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 12 AMPERES 60 VOLTS 1,2,3 5,6 MARKING DIAGRAM A 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 A A Not Used TE1260 AYWWZZ TE1260 A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability C C ORDERING INFORMATION Device Package Shipping† NRVTS1260EMFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel NRVTS1260EMFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel spec...




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