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MBR30H100MFS Dataheets PDF



Part Number MBR30H100MFS
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Switch-mode Power Rectifiers
Datasheet MBR30H100MFS DatasheetMBR30H100MFS Datasheet (PDF)

Switch-mode Power Rectifiers MBR30H100MFS, NRVB30H100MFS These state−of−the−art devices have the following features: Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified.

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Switch-mode Power Rectifiers MBR30H100MFS, NRVB30H100MFS These state−of−the−art devices have the following features: Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable  These are Pb−Free and Halide−Free Devices Mechanical Characteristics:  Case: Epoxy, Molded  Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  Lead Finish: 100% Matte Sn (Tin)  Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds  Device Meets MSL 1 Requirements Applications  Output Rectification in Compact Portable Consumer Applications  Freewheeling Diode used with Inductive Loads  Telecom Power Conversion  Automotive Freewheeling Diode DATA SHEET www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 100 VOLTS 1,2,3 5,6 MARKING DIAGRAM A 1 C SO−8 FLAT LEAD CASE 488AA A B30H10 A AYWZZ STYLE 2 Not Used C B30H10 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping† MBR30H100MFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel MBR30H100MFST3G SO−8 FL (Pb−Free) NRVB30H100MFST1G SO−8 FL (Pb−Free) 5000 / Tape & Reel 1500 / Tape & Reel NRVB30H100MFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2015 1 January, 2024 − Rev. 3 Publication Order Number: MBR30H100MFS/D MBR30H100MFS, NRVB30H100MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 140C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model) VRRM VRWM VR IF(AV) IFRM IFSM Tstg TJ EAS V 100 30 A 60 A 300 A −65 to +175 C −55 to +175 C 100 mJ 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 .



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