Document
Switch-mode Power Rectifiers
MBR30H100MFS, NRVB30H100MFS
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection Low Forward Voltage Drop 175C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads Telecom Power Conversion Automotive Freewheeling Diode
DATA SHEET www.onsemi.com
SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 100 VOLTS
1,2,3
5,6
MARKING DIAGRAM
A
1
C
SO−8 FLAT LEAD CASE 488AA
A B30H10 A AYWZZ
STYLE 2
Not Used
C
B30H10 = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
MBR30H100MFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR30H100MFST3G SO−8 FL (Pb−Free)
NRVB30H100MFST1G SO−8 FL (Pb−Free)
5000 / Tape & Reel
1500 / Tape & Reel
NRVB30H100MFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2015
1
January, 2024 − Rev. 3
Publication Order Number: MBR30H100MFS/D
MBR30H100MFS, NRVB30H100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR, TC = 140C)
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
VRRM VRWM
VR IF(AV)
IFRM
IFSM
Tstg TJ EAS
V
100
30
A
60
A
300
A
−65 to +175
C
−55 to +175
C
100
mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 .
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