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NRVB460MFST1G Dataheets PDF



Part Number NRVB460MFST1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SWITCHMODE Power Rectifiers
Datasheet NRVB460MFST1G DatasheetNRVB460MFST1G Datasheet (PDF)

MBR460MFS, NRVB460MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free and .

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MBR460MFS, NRVB460MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free and Halide−Free Devices Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Device Meets MSL 1 Requirements Applications • Ideally Suited for use as an Output Rectifier in High Frequency (up to 2 MHz) Automotive and Non−Automotive Applications • Output Rectification in Compact Portable Consumer Applications • Freewheeling Diode used with Inductive Loads http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 4 AMPERES 60 VOLTS 1,2,3 5,6 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 MARKING DIAGRAM A A A Not Used B460 AYWZZ C C B460 A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device MBR460MFST1G MBR460MFST3G NRVB460MFST1G NRVB460MFST3G Package SO−8 FL (Pb−Free) SO−8 FL (Pb−Free) SO−8 FL (Pb−Free) SO−8 FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel 1500 / Tape & Reel 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 0 1 Publication Order Number: MBR460MFS/D MBR460MFS, NRVB460MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 165°C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 165°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IF(AV) IFRM IFSM V 60 4.0 A 8.0 A 40 A Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model) Tstg TJ EAS −65 to +175 −55 to +175 10 3B °C °C mJ ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 4 Amps, TJ = 125°C) (iF = 4 Amps, TJ = 25°C) Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol RθJC vF iR Typ − 0.65 0.71 6.5 0.01 Max Unit 2.4 °C/W V 0.72 0.74 mA 20 0.2 http://onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) MBR460MFS, NRVB460MFS TYPICAL CHARACTERISTICS 100 100 iF, INSTANTANEOUS FORWARD CURRENT (A) 10 TA = 175°C 10 TA = 175°C TA = 125°C 1 TA = 150°C TA = 125°C 1 TA = 150°C 0.1 0 TA = 25°C TA = −40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics 0.9 TA = 25°C 0.1 0 TA = −40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) 1.E+00 1.E−01 TA = 175°C 1.E−02 1.E−03 TA = 125°C 1.E−04 1.E−05 TA = 150°C TA = 25°C 1.E−06 1.E−07 1.E−08 TA = −40°C 1.E−09 1.E−10 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics 1.E+00 1.E−01 TA = 175°C 1.E−02 1.E−03 1.E−04 1.E−05 TA = 150°C TA = 125°C TA = 25°C 1.E−06 1.E−07 1.E−08 1.E−09 0 TA = −40°C 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) 1000 100 TJ = 25°C 10 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance 10 9 8 7 6 5 4 3 2 1 0 60 RqJC = 2.4°C/W DC Square Wave 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 6. Current Derating TO−220AB C, JUNCTION CAPACITANCE (pF) http://onsemi.com 3 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) MBR460MFS, NRVB460MFS TYPICAL CHARACTERISTICS 8 IPK/IAV = 20 IPK/IAV = 10 7 TJ = 175°C 6 5 IPK/IAV = 5 4 Square Wave 3 2 DC 1 0 012 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forwa.


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