Document
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G Series
6 5
4
1 2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.) °C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic (Both Junctions Heated)
Symbol
Max
Total Device Dissipation T A = 25°C Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
PD
R θJA R θJL
250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.)
Junction and Storage Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit mW mW/°C °C/W °C/W
°C
6 54
Q2 R1 R2
R2 R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking = (See Page 2)
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Rev.O 1/10
LESHAN RADIO COMPANY, LTD.
LMUN5211DW1T1G Series
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device
Package
Marking
R1(K)
R2(K)
LMUN5211DW1T1G
SOT-363
7A
10 10
LMUN5211DW1T3G
SOT-363
7A
10 10
LMUN5212DW1T1G
SOT-363
7B
22 22
LMUN5212DW1T3G LMUN5213DW1T1G
SOT-363 SOT-363
7B 7C
22 22 47 47
LMUN5213DW1T3G
SOT-363
7C
47 47
LMUN5214DW1T1G
SOT-363
7D
10 47
LMUN5214DW1T3G LMUN5215DW1T1G LMUN5215DW1T3G LMUN5216DW1T1G LMUN5216DW1T3G LMUN5230DW1T1G
SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
7D 7E 7E 7F 7F 7G
10 47 10 Ğ 10 Ğ 4.7 Ğ 4.7 Ğ 11
LMUN5230DW1T3G LMUN5231DW1T1G
SOT-363 SOT-363
7G 7H
11 2.2 2.2
LMUN5231DW1T3G LMUN5232DW1T1G
SOT-363 SOT-363
7H 7J
2.2 2.2 4.7 4.7
LMUN5232DW1T3G LMUN5233DW1T1G
SOT-363 SOT-363
7J 7K
4.7 4.7 4.7 47
LMUN5233DW1T3G
SOT-363
7K
4.7 47
LMUN5234DW1T1G
SOT-363
7L
22 47
LMUN5234DW1T3G
SOT-363
7L
22 47
LMUN5235DW1T.