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LMUN5211DW1T1G Dataheets PDF



Part Number LMUN5211DW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual Bias ResistorTransistors
Datasheet LMUN5211DW1T1G DatasheetLMUN5211DW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single dev.

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LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements. LMUN5211DW1T1G Series 6 5 4 1 2 3 SC-88/SOT-363 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – R θJA 670 (Note 1.) °C/W Junction-to-Ambient 490 (Note 2.) Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead PD R θJA R θJL 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) Junction and Storage Temperature T J , T stg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 7X 1 23 7X = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Rev.O 1/10 LESHAN RADIO COMPANY, LTD. LMUN5211DW1T1G Series DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) LMUN5211DW1T1G SOT-363 7A 10 10 LMUN5211DW1T3G SOT-363 7A 10 10 LMUN5212DW1T1G SOT-363 7B 22 22 LMUN5212DW1T3G LMUN5213DW1T1G SOT-363 SOT-363 7B 7C 22 22 47 47 LMUN5213DW1T3G SOT-363 7C 47 47 LMUN5214DW1T1G SOT-363 7D 10 47 LMUN5214DW1T3G LMUN5215DW1T1G LMUN5215DW1T3G LMUN5216DW1T1G LMUN5216DW1T3G LMUN5230DW1T1G SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 7D 7E 7E 7F 7F 7G 10 47 10 Ğ 10 Ğ 4.7 Ğ 4.7 Ğ 11 LMUN5230DW1T3G LMUN5231DW1T1G SOT-363 SOT-363 7G 7H 11 2.2 2.2 LMUN5231DW1T3G LMUN5232DW1T1G SOT-363 SOT-363 7H 7J 2.2 2.2 4.7 4.7 LMUN5232DW1T3G LMUN5233DW1T1G SOT-363 SOT-363 7J 7K 4.7 4.7 4.7 47 LMUN5233DW1T3G SOT-363 7K 4.7 47 LMUN5234DW1T1G SOT-363 7L 22 47 LMUN5234DW1T3G SOT-363 7L 22 47 LMUN5235DW1T.


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