Document
PD - 96130A
IRF6714MPbF
IRF6714MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible l Ultra Low Package Inductance
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V
l Optimized for High Frequency Switching
Qg tot
l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter
29nC
Qgd
8.3nC
Qgs2
4.1nC
Qrr
36nC
Qoss
23nC
Vgs(th)
1.9V
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
25 ±20
V
29
23 166
A
234
175 mJ
23 A
5 4 ID = 29A
3
2 TJ = 125°C
1 TJ = 25°C
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14 12 ID= 23A
10
VDS= 20V VDS= 13V
8
6
4
2
0 0 10 20 30 40 50 60 70 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A.
1
04/29/09
Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V)
IRF6714MPbF
BVDSS ∆ΒVDSS/∆TJ RDS(on)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th) ∆VGS(th)/∆TJ IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min. 25 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 122 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 18 1.6 2.6 1.9 -6.5 ––– ––– ––– ––– ––– 29 9.0 4.1 8.3 8.1 12 23 1.2 18 26 13 9.6 3890 1110 490
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
i2.1 i3.4
mΩ
VGS = 10V, ID = 29A VGS = 4.5V, ID = 23A
2.4 –––
V mV/°C
VDS
=
VGS,
ID
=
100µA
1.0 150 100 -100 –––
µA
VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V VGS = -20V
S VDS = 13V, ID = 23A
44
––– VDS = 13V
––– –––
nC
VGS = 4.5V ID = 23A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi2.2 Ω
––– VDD = 13V, VGS = 4.5V
––– –––
ns
ID = 23A RG = 1.8Ω, RD = 0.54Ω
––– See Fig. 17
––– VGS = 0V ––– pF VDS = 13V ––– ƒ = 1.0MHz
Min. –––
–––
––– ––– –––
Typ. –––
–––
––– 26 36
Max. Units
Conditions
112 234
MO.