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IRF6714MTRPbF Dataheets PDF



Part Number IRF6714MTRPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6714MTRPbF DatasheetIRF6714MTRPbF Datasheet (PDF)

PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halogen Free  l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V l Optimized for High Frequency Switching  Qg tot l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter 29nC Qgd 8.3nC Qgs2 4.1nC Qrr 36nC Qoss.

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PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halogen Free  l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V l Optimized for High Frequency Switching  Qg tot l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter 29nC Qgd 8.3nC Qgs2 4.1nC Qrr 36nC Qoss 23nC Vgs(th) 1.9V l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V fContinuous Drain Current, VGS @ 10V gPulsed Drain Current Single Pulse Avalanche Energy Avalanche Current 25 ±20 V 29 23 166 A 234 175 mJ 23 A 5 4 ID = 29A 3 2 TJ = 125°C 1 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com 14 12 ID= 23A 10 VDS= 20V VDS= 13V 8 6 4 2 0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A. 1 04/29/09 Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) IRF6714MPbF BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ãg(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 25 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 122 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 18 1.6 2.6 1.9 -6.5 ––– ––– ––– ––– ––– 29 9.0 4.1 8.3 8.1 12 23 1.2 18 26 13 9.6 3890 1110 490 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1mA i2.1 i3.4 mΩ VGS = 10V, ID = 29A VGS = 4.5V, ID = 23A 2.4 ––– V mV/°C VDS = VGS, ID = 100µA 1.0 150 100 -100 ––– µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 13V, ID = 23A 44 ––– VDS = 13V ––– ––– nC VGS = 4.5V ID = 23A ––– See Fig. 15 ––– ––– nC VDS = 16V, VGS = 0V Ãi2.2 Ω ––– VDD = 13V, VGS = 4.5V ––– ––– ns ID = 23A RG = 1.8Ω, RD = 0.54Ω ––– See Fig. 17 ––– VGS = 0V ––– pF VDS = 13V ––– ƒ = 1.0MHz Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 26 36 Max. Units Conditions 112 234 MO.


IRF6714MPbF IRF6714MTRPbF PH1225AL


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