HEXFET Power MOSFET
PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating T...
Description
PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB
D2Pak
TO-262
IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9)
c Pulsed Drain Current
Maximum Power Dissipation
VGS EAS EAS (tested) IAR EAR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited) i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface
Junction-to-Ambien...
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