Document
ESD7421, SZESD7421
ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD7421 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, automotive sensors, infotainment, MP3 players, digital cameras and many other applications where board space comes at a premium.
Specification Features
• Low Capacitance 0.3 pF • Low Clamping Voltage • Low Leakage 100 nA • Response Time is < 1 ns • IEC61000−4−2 Level 4 ESD Protection • SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact Air
±12 kV ±15
Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
°PD°
RqJA TJ, Tstg
TL
300 mW 400 °C/W −55 to +150 °C 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in.
http://onsemi.com
Pin 1
Pin 2
MARKING DIAGRAM
XDFN2 (SOD−882) CASE 711AM
5M G
5 = Specific Device Code M = Date Code G = Pb−Free Package
ORDERING INFORMATION
Device ESD7421N2T5G
Package
XDFN2 (Pb−Free)
Shipping†
8000 / Tape & Reel
SZESD7421N2T5G XDFN2 (Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
Publication Order Number: ESD7421/D
ESD7421, SZESD7421
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR1
Breakdown Voltage @ IT
VBR2
Breakdown Voltage @ IT
IT Test Current
*See Application Note AND8308/D for detailed explanations of datasheet parameters.
I IPP
IT VC VBR2 VRWM IR
IIRT VRWM VBR1 VC V
IPP Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
VRWM
Pin 1 to GND Pin 2 to GND
5 16 V 5 10
Breakdown Voltage
Breakdown Voltage
Reverse Leakage Current
VBR1 VBR2
IR
IT = 1 mA, Pin 1 to GND IT = 1 mA, Pin 2 to GND VRWM = 5 V, I/O Pin to GND
16.5 10.5
100
V 14 V 500 nA
Clamping Voltage (Note 2)
VC
IEC61000−4−2, ±8 kV Contact
See Figures 2 and 3
Clamping Voltage TLP (Note 3)
VC
IPP = 8 A IPP = 16 A
IPP = −8 A
IPP = −16 A
35 38.1 −21 −29.5
V
Junction Capacitance
CJ VR = 0 V, f = 1 MHz between I/O Pins and GND
0.3 0.6 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see Figure 5 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
http://onsemi.com 2
ESD7421, SZESD7421
CAPACITANCE (pF)
1.0
0.9 0.8 0.7 0.6
0.5
0.4
0.3
0.2
0.1
0 −5
−4 −3 −2 −1 0 1 2 3 4
VBias (V) Figure 1. Typical CV Characteristic Curve
Pin1 to GND (GND connected to Pin2)
5
120 20
100 0
80 −20
60 −40
40 −60
20 −80
0 −100
−20 −25
0
−120
25 50 75 100 125 150
−25 0
25 50 75 100 125 150
TIME (ns)
TIME (ns)
Figure 2. IEC61000−4−2 +8 kV Contact ESD Clamping Voltage
Pin1 to GND (GND connected to Pin2)
Figure 3. IEC61000−4−2 −8 kV Contact ESD Clamping Voltage
Pin1 to GND (GND connected to Pin2)
VOLTAGE (V) VOLTAGE (V)
http://onsemi.com 3
ESD7421, SZESD7421
IEC 61000−4−2 Spec.
Level
First Peak
Test Volt- Current Current at
age (kV)
(A) 30 ns (A)
1 2 7.5 4
2 4 15 8
3 6 22.5 12
48
30 16
Current at 60 ns (A)
2 4 6 8
IEC61000−4−2 Waveform Ipeak 100% 90%
I @ 30 ns
I @ 60 ns
10% Figure 4. IEC61000−4−2 Spec
tP = 0.7 ns to 1 ns
ESD Gun
TVS
Oscilloscope
50 W Cable
50 W
Figure 5. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices.
ESD Voltage Clamping For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during.