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ZXTNS618MCTA

Part Number	ZXTNS618MCTA
Manufacturer	Diodes
Description	20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
Published	Aug 26, 2015
Detailed Description	Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (15...
Datasheet	ZXTNS618MCTA PDF File

Overview

Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.
5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier Low profile 0.
8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free.
“Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability A Product Line of Diodes...

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