STW60NM50N

STW60NM50N N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V <0.043 Ω 68 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram ' * Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 $0Y Order codes STW60NM50N Table 1. Device summary Marking Packages 60NM50N TO-247 Packaging Tube April 2013 This is information on a product in full production. DocID023157 Rev 2 1/13 www.st.com 13 Contents Contents STW60NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . ....