Document
DATA SHEET www.onsemi.com
Trench Schottky Rectifier, Very Low Leakage
NRVTSS5100E, NRVTSAF5100E
SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • High Surge Capability • NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters • Freewheeling and OR−ing diodes • Reverse Battery Protection • Instrumentation • LED Lighting
Mechanical Characteristics:
• Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
SMB CASE 403A
SMA−FL CASE 403AA
STYLE 6
MARKING DIAGRAMS
AYWW TE51G
G
E51 AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
March, 2023 − Rev. 4
Publication Order Number: NRVTSS5100E/D
NRVTSS5100E, NRVTSAF5100E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM
V
VRWM
VR
100
Average Rectified Forward Current (TL = 100°C)
IF(AV)
5.0
A
Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 83°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
IFSM
50
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range Operating Junction Temperature ESD Rating (Human Body Model)
Tstg
−65 to +175
°C
TJ
−55 to +175
°C
1B
ESD Rating (Charged Device Model)
> 1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Steady State (Note 1)
(NRVTSAF5100E)
Junction−to−Lead
Junction−to−Ambient
(NRVTSS5100E)
Junction−to−Lead
Junction−to−Ambient 1. Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board
Symbol
RθJL RθJA RθJL RθJA
Max
25 90 13.1 71.1
Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 5.0 A, TJ = 25°C)
Symbol
Typ
vF 0.56
0.65
Max
Unit
V − 0.69
(iF = 3.0 A, TJ = 125°C) (iF = 5.0 A, TJ = 125°C)
0.50
−
0.56
0.62
Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C)
iR
2.6
29
mA
2.2
5
mA
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
pF
54.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com 2
iF, INSTANTANEOUS FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD CURRENT (A)
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
100
100
10
TA = 150°C
TA = 125°C TA = 85°C
1
TA = 175°C
TA = 25°C
TA = 150°C 10
TA = 125°C
TA = 85°C
TA = 175°C
1
TA = 25°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
TA = −55°C 0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
TA = −55°C 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward Characteristics
1.E−01 1.E−02 1.E−03 1.E−04
TA = 175°C TA = 150°C TA = 125°C
TA = 85°C
1.E−01 1.E−02 1.E−03 1.E−04
TA = 175°C TA = 150°C TA = 125°C
TA = 85°C
1.E−05 1.E−06
TA = 25°C
1.E−05 1.E−06
TA = 25°C
1.E−07
1.E−07
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
IF(AV), AVERAGE FORWARD CURRENT (A)
1000 100
TJ = 25°C
10
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
9 8 DC
7
6 Square Wave 5
4
3
2
1 RqJL = 13.1°C/W 0
0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C)
.