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NRVTSAF5100E Dataheets PDF



Part Number NRVTSAF5100E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Low Leakage Trench-based Schottky Rectifier
Datasheet NRVTSAF5100E DatasheetNRVTSAF5100E Datasheet (PDF)

DATA SHEET www.onsemi.com Trench Schottky Rectifier, Very Low Leakage NRVTSS5100E, NRVTSAF5100E SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • High Surge Capability • NRV Prefix for Automotive and Other Applications Requiring U.

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DATA SHEET www.onsemi.com Trench Schottky Rectifier, Very Low Leakage NRVTSS5100E, NRVTSAF5100E SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • High Surge Capability • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free and Halide−Free Devices Typical Applications • Switching Power Supplies including Wireless, Smartphone and Notebook Adapters • High Frequency and DC−DC Converters • Freewheeling and OR−ing diodes • Reverse Battery Protection • Instrumentation • LED Lighting Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Device Meets MSL 1 Requirements SMB CASE 403A SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAMS AYWW TE51G G E51 AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 March, 2023 − Rev. 4 Publication Order Number: NRVTSS5100E/D NRVTSS5100E, NRVTSAF5100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM V VRWM VR 100 Average Rectified Forward Current (TL = 100°C) IF(AV) 5.0 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 83°C) IFRM 10 A Non−Repetitive Peak Surge Current IFSM 50 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature ESD Rating (Human Body Model) Tstg −65 to +175 °C TJ −55 to +175 °C 1B ESD Rating (Charged Device Model) > 1000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Steady State (Note 1) (NRVTSAF5100E) Junction−to−Lead Junction−to−Ambient (NRVTSS5100E) Junction−to−Lead Junction−to−Ambient 1. Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board Symbol RθJL RθJA RθJL RθJA Max 25 90 13.1 71.1 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 5.0 A, TJ = 25°C) Symbol Typ vF 0.56 0.65 Max Unit V − 0.69 (iF = 3.0 A, TJ = 125°C) (iF = 5.0 A, TJ = 125°C) 0.50 − 0.56 0.62 Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR 2.6 29 mA 2.2 5 mA Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd pF 54.4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) NRVTSS5100E, NRVTSAF5100E TYPICAL CHARACTERISTICS 100 100 10 TA = 150°C TA = 125°C TA = 85°C 1 TA = 175°C TA = 25°C TA = 150°C 10 TA = 125°C TA = 85°C TA = 175°C 1 TA = 25°C IR, INSTANTANEOUS REVERSE CURRENT (A) TA = −55°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TA = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.E−02 1.E−03 1.E−04 TA = 175°C TA = 150°C TA = 125°C TA = 85°C 1.E−01 1.E−02 1.E−03 1.E−04 TA = 175°C TA = 150°C TA = 125°C TA = 85°C 1.E−05 1.E−06 TA = 25°C 1.E−05 1.E−06 TA = 25°C 1.E−07 1.E−07 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) 1000 100 TJ = 25°C 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance 9 8 DC 7 6 Square Wave 5 4 3 2 1 RqJL = 13.1°C/W 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) .


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