Surface Mount Schottky Power Rectifier
MBRAF3200, NRVBAF3200
This device employs the Schottky Barrier principle in a la...
Surface Mount
Schottky Power Rectifier
MBRAF3200, NRVBAF3200
This device employs the
Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
This is a Pb−Free Device
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM
200
V
VRWM
VR
Average Rectified Forward ...