FDPF190N15A

FDPF190N15A — N-Channel PowerTrench® MOSFET November 2015 FDPF190N15A N-Channel PowerTrench® MOSFET 150 V, 27.4 A, 19 mΩ Features RDS(on) = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A Low Gate Charge, QG = 31 nC (Typ.) Low Crss (Typ. 56 pF) Fast Switching Speed Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LED TV Synchronous Rectification for ATX / Sever / Telecom PSU Uninterruptible Power Supply Micro Solar Inverter D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDPF190N15A 150 ±20 ±30 27.4 17.4 110 261 6.0 33 0.26 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF190N15A 3.3 62.5 Unit V V A A mJ V/ns W W...