18N20GH

Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free D G Description S AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GJ) are available for low-profile applications. BVDSS RDS(ON) ID 200V 170mΩ 18A G DS TO-252(H) G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 200 V + 20 V ID@TC=25℃ Drain Current, VGS @ 10V 18 A ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 9.5 A 60 A PD@TC=25℃ Total Power Dissipation 89 W PD@TA=25℃ Linear Derating Factor Total Power Dissipation3 0.7 W/℃ 2W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-amb...