FW811

Ordering number : ENA1570 FW811 SANYO Semiconductors DATA SHEET FW811 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Electrical Characteristics at Ta=25°C Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 8 9 52 2.0 2.2 150 --55 to +150 Unit V V A A A W W °C °C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : W811 V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=4A, VGS=4.5V ID=4A, VGS=4V min 35 1.2 2.7 Ratings typ max 1 ±10 2.6 Unit V μA μA V 4.5 S 18 24 mΩ 29 41 mΩ 39 55 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general elect...