FW907

Ordering number : ENA1810 FW907 SANYO Semiconductors DATA SHEET FW907 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features ON-resistance Nch: RDS(on)1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s N-channel P-channel 30 --30 ±20 ±20 10 --8 11.5 --9 24 --19 52 --52 2.3 2.5 150 --55 to +150 Unit V V A A A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.0 85 0.2 Product & Package Information Package : SOP8 JEITA, JEDEC : SC-87, SOT96 Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 1.8 MAX 1.5 6.0 0.7 0.8 4.4 0.8 0.3 1 1.27 0.1 1 : Source1 2 : Gate1 3 : Source2 4 4 : Gate2 0.43 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 TL Electrical Connection 8765 W907 LOT No. SANYO : SOP8 1234 http://semicon.sanyo.com/en/network 72810PA TK IM TC-00002249 No. A1810-1/6 Electrical Characteristics at Ta=25°C FW907 Parameter Symbol [N-c...