T2095

Production specification High Voltage Fast Switching NPN Power Transistor FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product Pb Lead-free T2095 APPLICATIONS z Battery charger z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier SOT-89S ORDERING INFORMATION Type No. Marking T2095 T2095 Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICP PC Tj, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current（pulse） Collector Dissipation Junction Temperature Storage Temperature 700 450 12 0.8 1.6 1 150 -55 to +150 Units V V V A A W ℃ ℃ Z003 Rev.A www.gmicroelec.com 1 Production specification High Voltage Fast Switching NPN Power Transistor T2095 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 700 800 450 500 12 15 Collector cut-off current Collector cut-off current Emitter cut-off current ICBO VCB=700V,IE=0 ICEO VCE=450V,IE=0 IEBO VEB=10V,IC=0 5 10 5 DC current gain VCE=10V,IC=5mA 13 hFE VCE=10V,IC=130mA 20 25 40 VCE=10V,IC=500m A 8 12 Collector-emitter saturatio...