UPA2731UT1A

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2731UT1A SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A) Low Ciss: Ciss = 3620 pF TYP. Small and surface mount package (8pin HVSON) 0.42 +0.1 −0.05 1.27 0.10 M PACKAGE DRAWING (Unit: mm) 1 2 3 4 8 7 6 5 6 ±0.2 5.4 ±0.2 5 ±0.2 5.15 ±0.2 0.10 S 0.27 ±0.05 1.0 MAX. +0.05 −0 0 ORDERING INFORMATION PART NUMBER μ PA2731UT1A-E1-AZ Note μ PA2731UT1A-E2-AZ Note PACKAGE 8pin HVSON 8pin HVSON 4.1 ±0.2 1 0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain Note Pb-free (This product does not contain Pb in external electrode.) 3.65 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) 0.6 ±0.15 0.7 ±0.15 Drain to Source Voltage (VGS = 0 V) VDSS −30 Gate to Source Voltage (VDS = 0 V) VGSS m20 Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2 ID(DC) ID(pulse) PT1 PT2 m44 m180 1.5 4.6 Channel Temperature Tch 150 Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Tstg −55 to +150 IAS −22 EAS 48 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm) V V A A W W °C...