IRF1010ZPbF

PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 7.5mΩ S ID = 75A TO-220AB D2Pak TO-262 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 94 66 75 360 140 Units A W Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy 0.90 ± 20 130 180 See Fig.12a, 12b, 15, 16 W/°C V mJ A mJ TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds iMounting Torque, 6-32 or ...