Power MOSFET
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l F...
Description
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant l Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Converter
G
G
Gate
AUIRFR8405 AUIRFU8405
HEXFET® Power MOSFET
VDSS
40V
RDS(on) typ.
1.65mΩ
max. ID (Silicon Limited)
1.98mΩ
c211A
ID (Package Limited)
100A
D D
D
S G
S GD
D-Pak
I-Pak
S AUIRFR8405 AUIRFU8405
D
D r a in
S
Source
Base part number
Package Type
Standard Pack Form Tube
Quantity 75
Complete Part Number AUIRFR8405
AUIRFR8405
DPak
Tape and Reel Tape and Reel Left
2000 3000
AUIRFR8405TR AUIRFR8405TRL
Tape and Reel Right
3000
AUIRFR8405TRR
AUIRFU8405
IPak
Tube
75 AUIRFU8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress...
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