FDMS3016DC

FDMS3016DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET FDMS3016DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET 30 V, 49 A, 6.0 mΩ July 2013 Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Pin 1 S S S G D5 D6 4G 3S D D D D Top Dual CoolTM 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS dv/dt PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 3) (Note 4) (Note 1a) 2S 1S Ratings 30 ±20 49 78 18 200 72 1.3 60 3.3 -55 to +150 Units V V A ...