NP80N055MLE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE, NP80N055KLE NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) Low input capacitance Ciss = 2900 pF TYP. Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability a...