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RJK1056DPB

Silicon N Channel Power MOS FET

Description

RJK1056DPB 100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1059EJ0200 (Pre...

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RJK1056DPB Silicon N Channel Power MOS FET - Renesas Technology

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