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IRF7420PBF-1

International Rectifier

HEXFET Power MOSFET

VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V...



IRF7420PBF-1

International Rectifier


Octopart Stock #: O-936390

Findchips Stock #: 936390-F

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 14 mΩ 17.5 mΩ 26 38 -11.5 mΩ nC A IRF7420PbF-1 S1 S2 S3 G4 HEXFET® Power MOSFET 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7420PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7420PbF-1 IRF7420TRPbF-1 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambientƒ Max. -12 -11.5 -9.2 -46 2.5 1.6 20 ±8 -55 to +150 Max. 50 Units V A W mW/°C V °C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-...




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