NGD18N40CLBT4G

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF VCES VCER VGE IC ESD 430 VDC 430 VDC 18 VDC 15 ADC 50 AAC kV 8.0 ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 Watts 0.77 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to +175 ...