Document
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL
Ignition IGBT 15 A, 410 V
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) • These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous @ TC = 25°C − Pulsed
VCES VCER VGE
IC
440 VDC 440 VDC 15 VDC 15 ADC 50 AAC
ESD (Human Body Model) R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD 107 Watts 0.71 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 AMPS 410 VOLTS VCE(on) 3 2.1 V @ IC = 10 A, VGE . 4.5 V
C
G RG RGE
4 12
3
E
DPAK CASE 369C
STYLE 2
12 3
4 D2PAK CASE 418B STYLE 4
4
TO−220AB CASE 221A
STYLE 9
12 3
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 8
1
Publication Order Number: NGD15N41CL/D
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C
THERMAL CHARACTERISTICS
EAS 250 200
mJ
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC 1.4 °C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
RθJA
100
D2PAK (Note 1)
RθJA
50
TO−220
RθJA
62.5.