NGD18N45CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short−Circuit Capability This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VCES VCER VGE IC 500 VDC 500 VDC 18 VDC 18 ADC 50 AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD kV 8.0 ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 400 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 Watts 0.77 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not ...