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HBR2060

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR2060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 60 V 175 ℃ 0.65V (...


Jilin Sino

HBR2060

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R SCHOTTKY BARRIER DIODE HBR2060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 60 V 175 ℃ 0.65V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-220HF TO-22OF ORDER MESSAGE Order codes Marking Package HBR2060Z HBR2060 TO-220 HBR2060ZR HBR2060 TO-220 HBR2060F HBR2060 TO-220F HBR2060FR HBR2060 TO-220F HBR2060HF HBR2060 TO-220HF HBR2060HFR HBR2060 TO-220HF Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.):201002F 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220F, TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR2060 Value 60 Unit V 60 V 20 A 10 150 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ) Value(max) 30 30 ...




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