STL65DN3LLH5

STL65DN3LLH5 Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET Features Type STL65DN3LLH5 VDSS 30 V RDS(on) max <0.0065 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. PowerFLAT™ (5x6) Double island Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STL65DN3LLH5 65DN3LLH5 Package PowerFLAT™(5x6) Double island Packaging Tape and reel December 2010 Doc ID 18323 Rev 1 1/12 www.st.com 12 Contents Contents STL65DN3LLH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . ...