NVTR4502P

NTR4502P, NVTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm) AEC Q101 Qualified − NVTR4502P These Devices are Pb−Free and are RoHS Compliant Applications DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera’s, etc. Battery Charging Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) Power Dissipation (Note 1) t < 10 s TA = 25°C TA = 70°C t < 10 s VDSS VGS ID PD −30 ±20 −1.95 −1.56 1.25 Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C State TA = 70°C Steady State ID PD −1.13 −0.90 0.4 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) IDM TJ, TSTG IS TL −6.8 −55 to 150 −1.25 260 Unit V V A W A W A °C A °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 300 °C/W Junction−to−Ambient – t = 10 s (Note 1) RqJA 100 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended e...