NVTFS5124PL

NVTFS5124PL MOSFET – Power, Single P-Channel -60 V, -6 A, 260 mW Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5124PLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C −6.0 A −4.0 18 W 9.0 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C −2.4 A −1.7 3.0 W 1.5 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM −24 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (TJ = 25°C, VDD = −50 V, VGS = −10 V, IL(pk) = −13 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes TL (1/8″ from case for 10 s) −18 A 8.5 mJ 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recomm...