NTB25P06

NTB25P06, NVB25P06 MOSFET – P-Channel, D2PAK -60 V, -27.5 A Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q101 Qualified − NVB25P06 These Devices are Pb−Free and are RoHS Compliant Typical Applications PWM Motor Controls Power Supplies Converters Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS −60 V VGS "15 V VGSM "20 Vpk ID 27.5 A IDM 80 Apk PD 120 W TJ, Tstg − 55 to °C +175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, IL(pk) = 20 A, L = 3 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) EAS 600 mJ RqJC RqJA RqJA TL °C/W 1.25 46.8 63.2 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1″ pad size (Cu A...