Document
Zener Diodes
CDZ55C-Series
Crownpo Technology
Features
• This diode is also available in other case styles including the 0805 case with the type designation CDZ55C-S-Series.
• Silicon Planar Power Zener Diodes.
Mechanical Data
Case: 1206 Weight : approx.10 mg Marking : Cathode band
.067 (1.70) .051 (1.30)
1206
.134 (3.40) .118 (3.00)
12
.030 (.75) .014 (.35)
.037 (.95) .029 (.75)
Dimensions in inches and (millimeters)
Mounting Pad Layout
.025(.635) .085(2.16) Typ.
Typ.
.067 (1.70) Typ.
Maximum Ratings and Thermal Characteristics (T amb = 25 °C, unless otherwise specified)
Parameter Power dissipation Junction temperature Storage temperature range Thermal resıstanceJunction to ambient aır
Symbol Ptot Tj Tstg RθJA
Value 500 175
- 65 to + 175 300
Unit mW °C
°C °C/W
Electrical Characteristics
Parameter Forward voltage IF = 200 mA
Symbol VF
Max 1.5
Unit V
16-Aug-07 Document No. 31004
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CDZ55C-Series
Crownpo Technology
Electrical Characteristics
Part Number
CDZ55C5V1 CDZ55C5V6 CDZ55C6V2 CDZ55C6V8 CDZ55C7V5 CDZ55C8V2 CDZ55C9V1 CDZ55C10 CDZ55C11 CDZ55C12 CDZ55C13 CDZ55C15 CDZ55C16 CDZ55C18 CDZ55C20 CDZ55C22 CDZ55C24 CDZ55C27 CDZ55C30 CDZ55C33 CDZ55C36
Nomınal Zener Voltage
Marking Code
VZ @ IZT
Min V
Max V
5V1 4.8
5.4
5V6 5.2 6V2 5.8 6V8 6.4 7V5 7
6 6.6 7.2 7.9
8V2 7.7
8.7
9V1 8.5
9.6
10 9.4 11 10.4
10.6 11.6
12 11.4 13 12.4 15 13.8 16 15.3 18 16.8 20 18.8
12.7 14.1 15.6 17.1 19.1 21.2
22 20.8
23.3
24 22.8
25.6
27 25.1
28.9
30 28
32
33 31
35
36 34
38
Max Zener Impedance
ZZT@ IZT
Ω mA 35 5 25 5 10 5 85 75 75 10 5 15 5 20 5 20 5 26 5 30 5 40 5 50 5 55 5 55 5 80 5 80 5 80 5 80 5 80 5
ZZK@ IZK Ω mA 550 1 450 1 200 1 150 1 50 1 50 1 50 1 70 1 70 1 90 1 110 1 110 1 170 1 170 1 220 1 220 1 220 1 220 1 220 1 220 1 220 1
Max Reverse Leakage Current
IR @ VR µA V 0.1 1 0.1 1 0.1 2 0.1 3 0.1 5 0.1 6.2 0.1 6.8 0.1 7.5 0.1 8.2 0.1 9.1 0.1 10 0.1 11 0.1 12 0.1 13 0.1 15 0.1 16
0.1 18
0.1 20 0.1 22 0.1 24 0.1 27
16-Aug-07 Document No. 31004
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CDZ55C-Series
Crownpo Technology
Typical Characteristics ( Tamb = 25 °C, unless otherwise specified)
R thJA –Therm.Resist.Junction/ Ambient ( K/W)
Fig1. Thermal Resistance vs. Lead Length 500
400
300
200
100
0 0
ll
TL =constant 5 10 15 l – Lead Length ( mm )
20
V Ztn –RelativeVoltageChange
Fig 4. Typical Change of Working Voltage vs. Junction Temperature
1.3 V Ztn =V Zt /V Z(25˚C)
1.2
TK VZ =10 x 10 -4 /K 8 x 10 -4 /K
1.1 6 x 10 -4 /K
4 x 10 -4 /K 2 x 10 -4 /K
1.0 0
-2 x 10 -4 /K
-4 x 10 -4 /K
0.9
0.8 –60
0 60 120 180 T j –Junction Temperature (°C )
240
Fig2. Total Power Dissipation vs. Ambient Temperature
Fig5. Temperature Coefficient of Vz vs. Z-Voltage
TK VZ –Temperature Coefficient of V Z( 10 -4 /K)
P tot –Total Power Dissipation ( mW)
600 500 400 300 200 100
0 0
40 80
120 160
T amb – Ambient Temperature(°C )
200
15
10
5 I Z =5mA
0
-5 0 10 20 30 40 50 V Z – Z-Voltage ( V )
Fig3. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C
1000
T j =25˚ C 100
I Z =5mA 10
V Z –VoltageChange( mV )
1 05
10 15 20 25
V Z – Z-Voltage ( V )
C D – Diode Capacitance ( pF )
Fig 6. Diode Capacitance vs. Z-Voltage 200
150 V R=2V T j =25˚ C
100
50
0 05
10 15 20 25
V Z – Z-Voltage ( V )
16-Aug-07 Document No. 31004
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CDZ55C-Series
Crownpo Technology
IF – Forward Current ( mA)
IZ – Z-Current ( mA)
Fig 7. Forward Current vs. Forward Voltage 100
10
T j =25˚ C 1
0.1
0.01
0.001 0
0.2 0.4
0.6 0.8
V F – Forward Voltage ( V )
1.0
IZ – Z-Current ( mA)
Fig 9. Z-Current vs. Z-Voltage 50
40
Ptot =500mW Tamb =25˚C
30
20
10
0 15 20 25 30 V Z –Z-Voltage ( V )
35
Fig 8. Z-Current vs. Z-Voltage 100
80 Ptot =500mW Tamb =25˚C
60
40
20
0 0 4 8 12 16 20 V Z –Z-Voltage ( V )
IZ – Z-Current ( mA)
Fig10. Differential Z-Resistance vs. Z-Voltage 1000
I Z =1mA 100
5mA 10 10mA
1 0 5 10
T j =25˚ C 15 20 25
V Z –Z-Voltage ( V )
Fig 11. Thermal Response 1000
tp/T=0.5 100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
tp/T=0.01
1 10 -1
10 0
Single Pulse
RthJA =300K/W T=T jmax –Tamb
iZM =(–V Z+(V Z2+4r zj x T/Z thp )1/2 )/(2r zj )
10 1 tp – Pulse Length ( ms )
10 2
Zthp – ThermalResistancefor PulseCond.(K/W)
16-Aug-07 Document No. 31004
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Device outlook
Shanghai plant (front side)
12
Shanghai plant (back side)
CDZ55C-Series
Crownpo Technology
Kunshan plant (front side)
12
Kunshan plant (back side)
16-Aug-07 Document No. 31004
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CDZ55C-Series
Crownpo Technology
Suggested thermal profiles for soldering processes
280
260
240
220
200
180
160 140 120
Peak Max dwell time 4 sec
100 80 60
Soak
Max gradient 2oC/s
Cool down
Max gradient -4 oC/s
40 Preheat
2 0 Max gradient 2oC/s
30 60
90 120 150 180 210 240 270 300 Time (seconds)
Fig.1 Typical Wave Soldering Thermal Profile
330
360
Temperature ( Co )
Temperature (oC)
240 220 200 180 160 140 120 100
80 60 40 20
16-Aug-07 Document No. 31004
Peak soldering temperature .