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CDZ55C6V8 Dataheets PDF



Part Number CDZ55C6V8
Manufacturers Crownpo Technology
Logo Crownpo Technology
Description Zener Diodes
Datasheet CDZ55C6V8 DatasheetCDZ55C6V8 Datasheet (PDF)

Zener Diodes CDZ55C-Series Crownpo Technology Features • This diode is also available in other case styles including the 0805 case with the type designation CDZ55C-S-Series. • Silicon Planar Power Zener Diodes. Mechanical Data Case: 1206 Weight : approx.10 mg Marking : Cathode band .067 (1.70) .051 (1.30) 1206 .134 (3.40) .118 (3.00) 12 .030 (.75) .014 (.35) .037 (.95) .029 (.75) Dimensions in inches and (millimeters) Mounting Pad Layout .025(.635) .085(2.16) Typ. Typ. .067 (1.70) Typ. .

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Zener Diodes CDZ55C-Series Crownpo Technology Features • This diode is also available in other case styles including the 0805 case with the type designation CDZ55C-S-Series. • Silicon Planar Power Zener Diodes. Mechanical Data Case: 1206 Weight : approx.10 mg Marking : Cathode band .067 (1.70) .051 (1.30) 1206 .134 (3.40) .118 (3.00) 12 .030 (.75) .014 (.35) .037 (.95) .029 (.75) Dimensions in inches and (millimeters) Mounting Pad Layout .025(.635) .085(2.16) Typ. Typ. .067 (1.70) Typ. Maximum Ratings and Thermal Characteristics (T amb = 25 °C, unless otherwise specified) Parameter Power dissipation Junction temperature Storage temperature range Thermal resıstanceJunction to ambient aır Symbol Ptot Tj Tstg RθJA Value 500 175 - 65 to + 175 300 Unit mW °C °C °C/W Electrical Characteristics Parameter Forward voltage IF = 200 mA Symbol VF Max 1.5 Unit V 16-Aug-07 Document No. 31004 www.crownpo.com CDZ55C-Series Crownpo Technology Electrical Characteristics Part Number CDZ55C5V1 CDZ55C5V6 CDZ55C6V2 CDZ55C6V8 CDZ55C7V5 CDZ55C8V2 CDZ55C9V1 CDZ55C10 CDZ55C11 CDZ55C12 CDZ55C13 CDZ55C15 CDZ55C16 CDZ55C18 CDZ55C20 CDZ55C22 CDZ55C24 CDZ55C27 CDZ55C30 CDZ55C33 CDZ55C36 Nomınal Zener Voltage Marking Code VZ @ IZT Min V Max V 5V1 4.8 5.4 5V6 5.2 6V2 5.8 6V8 6.4 7V5 7 6 6.6 7.2 7.9 8V2 7.7 8.7 9V1 8.5 9.6 10 9.4 11 10.4 10.6 11.6 12 11.4 13 12.4 15 13.8 16 15.3 18 16.8 20 18.8 12.7 14.1 15.6 17.1 19.1 21.2 22 20.8 23.3 24 22.8 25.6 27 25.1 28.9 30 28 32 33 31 35 36 34 38 Max Zener Impedance ZZT@ IZT Ω mA 35 5 25 5 10 5 85 75 75 10 5 15 5 20 5 20 5 26 5 30 5 40 5 50 5 55 5 55 5 80 5 80 5 80 5 80 5 80 5 ZZK@ IZK Ω mA 550 1 450 1 200 1 150 1 50 1 50 1 50 1 70 1 70 1 90 1 110 1 110 1 170 1 170 1 220 1 220 1 220 1 220 1 220 1 220 1 220 1 Max Reverse Leakage Current IR @ VR µA V 0.1 1 0.1 1 0.1 2 0.1 3 0.1 5 0.1 6.2 0.1 6.8 0.1 7.5 0.1 8.2 0.1 9.1 0.1 10 0.1 11 0.1 12 0.1 13 0.1 15 0.1 16 0.1 18 0.1 20 0.1 22 0.1 24 0.1 27 16-Aug-07 Document No. 31004 www.crownpo.com CDZ55C-Series Crownpo Technology Typical Characteristics ( Tamb = 25 °C, unless otherwise specified) R thJA –Therm.Resist.Junction/ Ambient ( K/W) Fig1. Thermal Resistance vs. Lead Length 500 400 300 200 100 0 0 ll TL =constant 5 10 15 l – Lead Length ( mm ) 20 V Ztn –RelativeVoltageChange Fig 4. Typical Change of Working Voltage vs. Junction Temperature 1.3 V Ztn =V Zt /V Z(25˚C) 1.2 TK VZ =10 x 10 -4 /K 8 x 10 -4 /K 1.1 6 x 10 -4 /K 4 x 10 -4 /K 2 x 10 -4 /K 1.0 0 -2 x 10 -4 /K -4 x 10 -4 /K 0.9 0.8 –60 0 60 120 180 T j –Junction Temperature (°C ) 240 Fig2. Total Power Dissipation vs. Ambient Temperature Fig5. Temperature Coefficient of Vz vs. Z-Voltage TK VZ –Temperature Coefficient of V Z( 10 -4 /K) P tot –Total Power Dissipation ( mW) 600 500 400 300 200 100 0 0 40 80 120 160 T amb – Ambient Temperature(°C ) 200 15 10 5 I Z =5mA 0 -5 0 10 20 30 40 50 V Z – Z-Voltage ( V ) Fig3. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 1000 T j =25˚ C 100 I Z =5mA 10 V Z –VoltageChange( mV ) 1 05 10 15 20 25 V Z – Z-Voltage ( V ) C D – Diode Capacitance ( pF ) Fig 6. Diode Capacitance vs. Z-Voltage 200 150 V R=2V T j =25˚ C 100 50 0 05 10 15 20 25 V Z – Z-Voltage ( V ) 16-Aug-07 Document No. 31004 www.crownpo.com CDZ55C-Series Crownpo Technology IF – Forward Current ( mA) IZ – Z-Current ( mA) Fig 7. Forward Current vs. Forward Voltage 100 10 T j =25˚ C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 V F – Forward Voltage ( V ) 1.0 IZ – Z-Current ( mA) Fig 9. Z-Current vs. Z-Voltage 50 40 Ptot =500mW Tamb =25˚C 30 20 10 0 15 20 25 30 V Z –Z-Voltage ( V ) 35 Fig 8. Z-Current vs. Z-Voltage 100 80 Ptot =500mW Tamb =25˚C 60 40 20 0 0 4 8 12 16 20 V Z –Z-Voltage ( V ) IZ – Z-Current ( mA) Fig10. Differential Z-Resistance vs. Z-Voltage 1000 I Z =1mA 100 5mA 10 10mA 1 0 5 10 T j =25˚ C 15 20 25 V Z –Z-Voltage ( V ) Fig 11. Thermal Response 1000 tp/T=0.5 100 tp/T=0.2 10 tp/T=0.1 tp/T=0.02 tp/T=0.05 tp/T=0.01 1 10 -1 10 0 Single Pulse RthJA =300K/W T=T jmax –Tamb iZM =(–V Z+(V Z2+4r zj x T/Z thp )1/2 )/(2r zj ) 10 1 tp – Pulse Length ( ms ) 10 2 Zthp – ThermalResistancefor PulseCond.(K/W) 16-Aug-07 Document No. 31004 www.crownpo.com Device outlook Shanghai plant (front side) 12 Shanghai plant (back side) CDZ55C-Series Crownpo Technology Kunshan plant (front side) 12 Kunshan plant (back side) 16-Aug-07 Document No. 31004 www.crownpo.com CDZ55C-Series Crownpo Technology Suggested thermal profiles for soldering processes 280 260 240 220 200 180 160 140 120 Peak Max dwell time 4 sec 100 80 60 Soak Max gradient 2oC/s Cool down Max gradient -4 oC/s 40 Preheat 2 0 Max gradient 2oC/s 30 60 90 120 150 180 210 240 270 300 Time (seconds) Fig.1 Typical Wave Soldering Thermal Profile 330 360 Temperature ( Co ) Temperature (oC) 240 220 200 180 160 140 120 100 80 60 40 20 16-Aug-07 Document No. 31004 Peak soldering temperature .


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