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2SC1923

SeCoS

NPN Transistor

Elektronische Bauelemente 2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “...


SeCoS

2SC1923

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Description
Elektronische Bauelemente 2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General purpose switching and amplification. CLASSIFICATION OF hFE Product-Rank 2SC1923-O Range 70~140 2SC1923-Y 100~200 MARKING hFE Rank hFE Rank C1923 O 031 C1923 Y 031 TO-92 AD B E CF GH Emitter Collector J Base REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Collector  Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76  Base ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 40 30 4 20 100 1250 150, -55~150  Emitter Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.5 μA VCB=18V, IE=0 Emitter Cut – Off Current IEBO - - 0.5 μA VEB=4V, IC=0 DC Current Gain hFE 70 - 200 VC...




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