NP60N04KUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP60N04KUG TO-263 (MP-25ZK) FEATURES Channel temperature 175 degree rating Super low on-state resistance RDS(on) = 6.1 mΩ MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 3400 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) VGSS ID(DC) ID(pulse) PT1 PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±60 ±240 1.8 88 175 −55 to +175 30 90 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch(peak) ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.71 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16861EJ3V0DS0...