N-Channel MOSFET
FDS86540 N-Channel PowerTrench® MOSFET
FDS86540
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
Max rDS(on)...
Description
FDS86540 N-Channel PowerTrench® MOSFET
FDS86540
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
May 2012
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) (Note 1) (Note 1a)
Ratings 60 ±20 18 120 194 5.0 2.5
-55 to +150
Units V V
A
mJ
W
°C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1) (Note 1a)
25 ...
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