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IRFL024ZPbF

International Rectifier
Part Number IRFL024ZPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 22, 2015
Detailed Description Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repeti...
Datasheet PDF File IRFL024ZPbF PDF File

IRFL024ZPbF
IRFL024ZPbF

Overview
Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of thisdesign area150°Cjunctionoperatingtemperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C iContinuous Drain Current,...


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