NTR1P02T1G

NTR1P02, NVR1P02 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life RDS(on) = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V Power Management in Portable and Battery−Powered Products Miniature SOT−23 Surface Mount Package Saves Board Space Mounting Information for SOT−23 Package Provided NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 1 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg −20 ±20 −1.0 −2.67 400 − 55 to 150 V V A mW °C Thermal Resistance; Junction−to−Ambient RqJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi...