NTRV4101P

NTR4101P, NTRV4101P MOSFET – Power, Single P-Channel, Trench, SOT-23 -20 V Features Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Load/Power Management for Portables Load/Power Management for Computing Charging Circuits and Battery Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t ≤ 10 s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.0 −2.4 −1.7 −3.2 0.73 V V A W Continuous Drain Current (Note 2) Power Dissipation (Note 2) t ≤ 10 s Steady State TA = 25°C TA = 85°C TA = 25°C ID PD 1.25 −1.8 A −1.3 0.42 W Pulsed Drain Current ESD Capability (Note 3) tp = 10 ms C = 100 pF, RS = 1500 W IDM −18 A ESD 225 V Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TJ, TSTG IS EAS −55 to 150 −2.4 16 °C A mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damag...