NVD3055L170

NTD3055L170, NVD3055L170 MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 9.0 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg 60 60 ±15 ±20 9.0 3.0 27 28.5 0.19 2.1 1.5 −55 to 175 Vdc Vdc Vdc Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJC RqJA RqJA TL 30 mJ °C/W 5.2 71.4 100 260 °C Stresses excee...